The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy

doi:10.11972/j.issn.1001-9014.XXXX.XX.001

Home > Archive>Volume 44, Issue 1, 2025 >1-8. DOI:10.11972/j.issn.1001-9014.XXXX.XX.001

The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy
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                        10.11972/j.issn.1001-9014.XXXX.XX.001
                    
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Affiliation:1.School of Electronic Information and Artificial Intelligence， Shaanxi University of Science and Technology， Xi’an 710016， China;2.School of Mechanical and Electrical Engineering， Xi’an Traffic Engineering Institute， Xi’an 710300， China;3.School of Information Science and Engineering， Hebei University of Science and Technology， Shijiazhuang 050018， China
Clc Number:TN304.2;TN305
Fund Project:This work was supported by the Natural Science Basic Research Program of Shaanxi Province （2023-JC-QN-0758）， Shaanxi University of Science and Technology Research Launch Project （2020BJ-26）. Doctoral Research Initializing Fund of Hebei University of Science and Technology， China （1181476）.

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Abstract:

This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAs_xSb_1-_x thin film. The Sb content of InAs_xSb_1-_x thin film in all samples was verified by HRXRD of the symmetrical 004 reflections and asymmetrical 115 reflections. The calculation results show that the Sb component was 0.6 in the InAs_xSb_1-_x thin film grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3， which has the highest electron mobility （28 560 cm²/V·s） at 300 K. At the same time， the influence of V/III ratio on the transport properties and crystal quality of Al_0.2In_0.8Sb/InAs_xSb_1-_x quantum well heterostructures also has been investigated. As a result， the Al_0.2In_0.8Sb/InAs_0.4Sb_0.6 quantum well heterostructure with a channel thickness of 30 nm grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3 has a maximum electron mobility of 28 300 cm²/V·s and a minimum RMS roughness of 0.68 nm. Through optimizing the growth conditions， our samples have higher electron mobility and smoother surface morphology.

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ZHANG Jing, YANG Zhi, ZHENG Li-Ming, ZHU Xiao-Juan, WANG Ping, YANG Lin. The influence of V/III ratio on electron mobility of the InAs_xSb_1-_x layers grown on GaAs substrate by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves,2025,44(1):1~8

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Received:January 20,2024
Revised:August 02,2024
Adopted:March 12,2024
Online: August 02,2024
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