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Home > Archive>Volume 43, Issue 4, 2024 >472-478. DOI:10.11972/j.issn.1001-9014.2024.04.006
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Investigation on p-type doping of PBn unipolar barrier InAsSb photodetectors
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Affiliation:

1.Kunming Institute of Physics， Kunming 650223， China;2.Beijing Engineering Research Center of Mixed Reality and Advanced Display， School of Optics and Photonics， Beijing Institute of Technology， Beijing 100081， China

Clc Number:

O475

Fund Project:

Supported by the Candidate Talents Training Fund of Yunnan Province （202205AC160054）； the National Natural Science Foundation of China （62174156）

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    Abstract:

    The lattice-matched XBn structures of InAsSb， grown on GaSb substrates， exhibit high crystal quality， and can achieve extremely low dark currents at high operating temperatures （HOT）. Its superior performance is attributed to the unipolar barrier， which blocks the majority carriers while allowing unhindered hole transport. To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure， this paper systematically investigates the influence of doping on the dark current， photocurrent， and tunneling characteristics of InAsSb photodetectors in the PBn structure. Three high-quality InAsSb samples with unintentionally doped absorption layers （AL） were prepared， with varying p-type doping concentrations in the GaSb contact layer （CL） and the AlAsSb barrier layer （BL）. As the p-type doping concentration in the CL increased， the device’s turn-on bias voltage also increased， and p-type doping in the BL led to tunneling occurring at lower bias voltages. For the sample with UID BL， which exhibited an extremely low dark current of 5×10-6 A/cm2. The photocurrent characteristics were well-fitted using the back-to-back diode model， revealing the presence of two opposing space charge regions on either side of the BL.

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ZHANG Jian, CHANG Chao, LI Hong-Fu, SHI Yu-Na, YIN Han-Xiang, LI Yan-Hui, YUE Biao, WANG Hai-Peng, YAN Chang-Shan, DAI Xin-Ran, DENG Gong-Rong, KONG Jin-Cheng, ZHAO Peng, ZHAO Jun. Investigation on p-type doping of PBn unipolar barrier InAsSb photodetectors[J]. Journal of Infrared and Millimeter Waves,2024,43(4):472~478

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History
  • Received:October 24,2023
  • Revised:June 14,2024
  • Adopted:December 19,2023
  • Online: June 13,2024
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