In the near-infrared, spectroscopic detection of molecules has been achieved using on-chip waveguides and resonators. However, in the mid-infrared band, many sensors still rely on off-chip light sources and detectors, which limit the integration and sensitivity of chemical sensing chips. Here, we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector. The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are coupled via the evanescent coupling, enabling low-loss and high-performance mid-infrared light detection. We simulated the photoelectricity characteristics of the device, analyzed the factors influencing the integration of the InAs/GaAsSb superlattice photodetector and the GaAsSb waveguide. Optimal thicknesses and lengths for the absorption layer are determined. With minimal noise equivalent power, the quantum efficiency can reach 68.9%. The waveguide detector based on Ⅲ-V materials is easier to integrate mid-infrared light source and realize the on-chip photoelectric detection chip.