In this paper, we report research results of 1280×1024 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays. The detector structure is PN-NP epitaxial multilayer and the signal is read out by sequential mode. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. The respective structure of each absorption region are Mid-Wavelength 1(MW1): 6ML ( InAs) /7ML ( GaSb) and Mid-Wavelength 2 (MW2) : 9ML ( InAs) /7ML ( GaSb). The pixel center distance of the detector is 12μm. At 80 K measurement, the detector has spectral response wavelength of 3-4μm and 3.8-5.2μm respectively; The MW1 detector has a peak detectivity of 6.32×10₁₁^cmHz_1/2^W_-1^; The MW2 detector has a peak detectivity of 2.84×10₁₁^cmHz_1/2^W_-1^.Infrared images of both wavebands have been taken using infrared imaging test by adjusting devices voltage bias. Its the first time 1280 × 1024 InAs/GaSb Type II superlattice mid-wave length two-color infrared focal plane detector has been reported in China.