In this paper, we report research results of 12.5μm long-wavelength infrared InAs/GaSb superlattice focal plane arrays. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy ( MBE) technology. The respective structure of absorption region is 15ML ( InAs) /7ML ( GaSb). The detector adopts PB-πBN double barrier structure to suppress the dark current. A long-wave focal plane detector with the size of 1024×1024 and the pixel center-to-center distance of 18×18μm was developed. The detector is packaged by a metal dewar, and a superlattice long-wavelength detector cryocooler assembly is formed by coupling with a refrigerator. At 60 K measurement, the detector has 50% cut-off wavelength of 12.5μm, The detector has a peak detectivity of 6.6×1010cmHz1/2W-1 , dead pixels rate of 1.05% and a noise equivalent temperature difference (NETD) is 21.2mK. Infrared images of this detector has been taken using infrared imaging test.