In this paper， we report research results of 12.5μm long-wavelength infrared InAs/GaSb superlattice focal plane arrays. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy （ MBE） technology. The respective structure of absorption region is 15ML （ InAs） /7ML （ GaSb）. The detector adopts PBπBN double barrier structure to suppress the dark current. A long-wave focal plane detector with the size of 1024×1024 and the pixel center-to-center distance of 18×18μm was developed. The detector is packaged by a metal dewar， and a superlattice long-wavelength detector cryocooler assembly is formed by coupling with a refrigerator. At 60 K measurement， the detector has 50% cut-off wavelength of 12.5μm， The detector has a peak detectivity of 6.6×10¹⁰cmHz^1/2W^-1 ， dead pixels rate of 1.05% and a noise equivalent temperature difference （NETD） is 21.2mK. Infrared images of this detector has been taken using infrared imaging test.