Investigation of Polarization Characteristics in Semiconductor Master Oscillator Power Amplifier
CSTR:
Author:
Affiliation:

1.The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China;2.Institute of Applied Electronics, CAEP, Mianyang 621900, China;3.Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

Clc Number:

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    To improve of polarization of master oscillator power amplifier (MOPA), the factors which have impact on the polarization characteristics of ridge and tapered waveguides are studied. The optical confinement factor of TE-mode in ridge waveguide is enlarged by 1.35 μm deep etching, whereas the TE optical gain in tapered amplifier is improved through on-chip metal stress regulation. Combining the methods above, the degree of polarization (DOP) of two section are prominently enhanced in addition to reduced polarization angle difference. Finally, a 90% DOP of the MOPA has been achieved by standard process fabrication.

    Reference
    Related
    Cited by
Get Citation
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:August 29,2023
  • Revised:July 17,2024
  • Adopted:September 27,2023
  • Online: July 11,2024
  • Published:
Article QR Code