In long-cavity edge-emitting diode lasers， longitudinal spatial hole burning （LSHB）， two-photon absorption （TPA） and free carrier absorption （FCA） are among the key factors that affect the linear increase in output power at high injection currents. In this paper， a simplified numerical analysis model is proposed for 1.06 μm long-cavity diode lasers by combining TPA and FCA losses with one-dimensional （1D） rate equations. The effects of LSHB， TPA and FCA on the output characteristics are systematically analyzed， and it is proposed that adjusting the front facet reflectivity and the position of the quantum well （QW） in the waveguide layer can improve the front facet output power.