Characteristics Analysis of 1.06um Long-cavity Diode Lasers Based on Asymmetric Waveguide Structures
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National Key Lab of High-Power Semiconductor Lasers,Changchun University of Science and Technology

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National Key R&D Project, National Natural Science Foundation of China, Jilin province science and technology development plan

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    Abstract:

    In long-cavity edge-emitting diode lasers, longitudinal spatial hole burning (LSHB), two-photon absorption(TPA) and free carrier absorption(FCA) are among the key factors affecting the linear increase in output power at high injection currents. In this paper, a simplified numerical analysis model is proposed for 1.06um wavelength long-cavity diode lasers by combining TPA and FCA losses with one-dimensional(1D) rate equations. The effects of LSHB, TPA and FCA on the output characteristics are systematically analyzed, and it is proposed that the front facet reflectivity and the position of the quantum well(QW) in the waveguide can be adjusted to improve the front facet output power.

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History
  • Received:August 07,2023
  • Revised:November 26,2023
  • Adopted:November 30,2023
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