GUO Zi-Lu
State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， China;University of Chinese Academy of Sciences， Beijing 100049， China;School of Physical Science and Technology， ShanghaiTech University， Shanghai 201210， ChinaWANG Wen-Juan
State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， China;Shanghai Research Center for Quantum Sciences， Shanghai 201315， ChinaQU Hui-Dan
State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaFAN Liu-Yan
State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaZHU Yi-Cheng
State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， China;University of Chinese Academy of Sciences， Beijing 100049， ChinaWANG Ya-Jie
State Key Laboratory of Surface Physics and Department of Physics， Fudan University， Shanghai 200438， ChinaZHENG Chang-Lin
State Key Laboratory of Surface Physics and Department of Physics， Fudan University， Shanghai 200438， ChinaWANG Xing-Jun
State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaCHEN Ping-Ping
State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaLU Wei
State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， China;University of Chinese Academy of Sciences， Beijing 100049， China;School of Physical Science and Technology， ShanghaiTech University， Shanghai 201210， China;Shanghai Research Center for Quantum Sciences， Shanghai 201315， China1.State Key Laboratory of Infrared Physics， Shanghai Institute of Technology Physics， Chinese Academy of Sciences， Shanghai 200083， China;2.University of Chinese Academy of Sciences， Beijing 100049， China;3.School of Physical Science and Technology， ShanghaiTech University， Shanghai 201210， China;4.Shanghai Research Center for Quantum Sciences， Shanghai 201315， China;5.State Key Laboratory of Surface Physics and Department of Physics， Fudan University， Shanghai 200438， China
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Supported by the National Natural Science Foundation of China （12027805，62171136， 62174166， U2241219）； the Science and Technology Commission of Shanghai Municipality （2019SHZDZX01， 22JC1402902） and the Strategic Priority Research Program of the Chinese Academy of Sciences （ XDB43010200）.
GUO Zi-Lu, WANG Wen-Juan, QU Hui-Dan, FAN Liu-Yan, ZHU Yi-Cheng, WANG Ya-Jie, ZHENG Chang-Lin, WANG Xing-Jun, CHEN Ping-Ping, LU Wei. Correlation between MBE deoxidation conditions and InGaAs/InP APD performance[J]. Journal of Infrared and Millimeter Waves,2024,43(1):63~69
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