High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature
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Affiliation:

1.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3.University of Shanghai for Science and Technology, Shanghai 200093, China;4.School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology,Shanghai 200093, China;5.University of Chinese Academy of Sciences, Beijing 100049, China

Clc Number:

TN312+.7

Fund Project:

Supported by the National Natural Science Foundation of China (NSFC) (62174166, 11991063, U2241219), Shanghai Municipal Science and Technology Major Project (2019SHZDZX01, 22JC1402902), and the Strategic Priority Research Program of Chinese Academy of Sciences( XDB43010200).

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    Abstract:

    We described a high-performance planar InGaAsP/InP single-photon avalanche diode (SPAD) with a separate absorption, grading, charge and multiplication (SAGCM) heterostructure. By electric field regulation and defects control, the SPAD operated in the gated-mode at 293 K with a photon detection efficiency (PDE) of 70%, a dark count rate (DCR) of 14.93 kHz and an after-pulse probability (APP) of 0.89%. Furthermore, when operated in the active quenching mode with a dead time of 200 ns, a PDE of 12.49% and a DCR of 72.29 kHz were achieved at room temperature.

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QI Yu-Fei, WANG Wen-Juan, SUN Jing-Hua, WU Wen, LIANG Yan, QU Hui-Dan, ZHOU Min, LU Wei. High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature[J]. Journal of Infrared and Millimeter Waves,2024,43(1):1~6

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History
  • Received:March 31,2023
  • Revised:November 30,2023
  • Adopted:April 23,2023
  • Online: November 27,2023
  • Published: