BAI Xue-Li
Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;School of Information Science and Technology， Shanghai University of Science and Technology， Shanghai 201210， ChinaCHAI Xu-Liang
Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;School of Physics and Optoelectronic Engineering， Hangzhou Institute for Advanced Study， University of Chinese Academy of Sciences， Hangzhou 310024， ChinaZHOU Yi
Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;School of Physics and Optoelectronic Engineering， Hangzhou Institute for Advanced Study， University of Chinese Academy of Sciences， Hangzhou 310024， ChinaZHU Yi-Hong
Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaLIANG Zhao-Ming
Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaXU Zhi-Cheng
Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaCHEN Jian-Xin
Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;School of Information Science and Technology， Shanghai University of Science and Technology， Shanghai 201210， China;School of Physics and Optoelectronic Engineering， Hangzhou Institute for Advanced Study， University of Chinese Academy of Sciences， Hangzhou 310024， China1.Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;2.School of Information Science and Technology， Shanghai University of Science and Technology， Shanghai 201210， China;3.School of Physics and Optoelectronic Engineering， Hangzhou Institute for Advanced Study， University of Chinese Academy of Sciences， Hangzhou 310024， China
TN303
Supported by the National Natural Science Foundation of China （62222412，61904183），the National Key Research and Development Program of China（2022YFB3606800），the Youth Innovation Promotion Association， CAS（Y202057），Shanghai Rising-Star Program（21YF1455000）
The interband cascade infrared photodetector （ICIP） can achieve high operating temperature by using the multistage cascade absorption region. But different design of absorption region will cause the mismatch of photogenerated carriers， which will affect the quantum efficiency of the device. In order to better understand the influence of the stage and thickness of ICIP on quantum efficiency， we measure the performance of ICIP based on the type-II InAs/GaSb superlattice at different operating temperatures. And based on the “average effect” of photocurrent， a quantum efficiency model operating at reverse bias voltage is established. Compared with the measured results， it is found that the experimental data and the calculated results are in good agreement at low temperatures. It is verified that the photocurrent is the average of current at all stages based on the electrical gain. However， the experimental photocurrent at high temperatures is lower than the calculation. This may be due to the short minority carrier lifetime at high temperatures， and the photogenerated carrier recombination mechanism exists at the interface of the absorption region and the relaxation region.
BAI Xue-Li, CHAI Xu-Liang, ZHOU Yi, ZHU Yi-Hong, LIANG Zhao-Ming, XU Zhi-Cheng, CHEN Jian-Xin. Study on photocurrent transport and quantum efficiency of interband cascade infrared photodetectors[J]. Journal of Infrared and Millimeter Waves,2023,42(6):716~723
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