NIR-driven large modulation depth terahertz modulator based on silver/carbon nanoparticles
Author:
Affiliation:

1.National Engineering Laboratory of Special Display Technology, National Key Laboratory of Advanced Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, Academy of Optoelectronic Technology, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, China;2.The 13th Research Institute of China Electronics Technology Group,Shijiazhuang 050051,China

Clc Number:

TN29

Fund Project:

The University Synergy Innovation Program of Anhui Province (No. GXXT-2022-015);Fundamental Research Funds for the Central Universities of China(No. PA2021GDSK0098);the Deutsche Forschungsgemeinschaft (German Research Foundation, DFG: RA2841/12-1-Grant No./Projektnummer 456700276), and the Chinesisch-Deutsches Zentrum fu?rWissenschaftsf?rderung (Sino-German Center for Research Promotion, CDZ: Grant No. GZ1580) within the frame of the Functional-Nano-Materials-Sciences Cooperation Group“FNMS-COOP”

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    Near-infrared light-driven terahertz modulators are an important component in terahertz/infrared fiber-optic hybrid communication systems. Here, a near-infrared driven terahertz modulator based on silver nanoparticles/carbon quantum dots (Ag NPs/CDs) is proposed. Experimental results show that the combination of silver nanoparticles (Ag NPs) and carbon quantum dots (CDs) induces quantum size effect and dielectric confinement effect of nanoparticles, and the absorption of NIR light by silicon substrate can be enhanced by using Ag NPs/CDs to achieve NIR-driven terahertz wave modulation. The terahertz transmission characteristics of the sample were characterized in the range of 0.22-0.33 THz with the 808 nm NIR modulation excitation source, and the modulation depth of the Ag NPs/CDs NIR terahertz modulator could reach about 83% compared with the reference silicon substrate, which was significantly higher than the modulation depth of the reference silicon substrate (~54%), realizing the terahertz wave modulation with large modulation depth. This research work has important applications in terahertz/infrared fiber hybrid communication systems.

    Reference
    Related
    Cited by
Get Citation

GOU Han-Guang, ZHU Yu, WU Zong-Dong, SHI Guang-Hua, LAI Wei-En. NIR-driven large modulation depth terahertz modulator based on silver/carbon nanoparticles[J]. Journal of Infrared and Millimeter Waves,2023,42(4):476~482

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:December 09,2022
  • Revised:June 05,2023
  • Adopted:February 02,2023
  • Online: June 02,2023
  • Published: