PANG Chao
State Key Lab on High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130000， ChinaYAN Chang-Ling
State Key Lab on High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130000， ChinaYANG Jing-Hang
State Key Lab on High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130000， ChinaQIAN Ran
State Key Lab on High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130000， ChinaLI Yi-Fei
State Key Lab on High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130000， ChinaState Key Lab on High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130000， China
TN248.4
Supported by Jilin Province Science and Technology Department project （20220101122JC）； Changchun University of Science and Technology project （627011102）.
The structure of a novel ring-shaped top-DBR etched microstructure VCSEL with a proton implantation high resistance region was designed. A ring column structure was formed from the upper electrode to the active region， which directly generated a hollow laser beam output. The optical field distribution of the etched microstructure VCSEL was calculated by FDTD software， and the obtained ring-shaped patterns maintained the hollow beam characteristics under the different mode numbers. We fabricated the etched microstructure VCSEL with a lasing wavelength of 848 nm at room temperature and investigated its performance. The threshold current was 0.27 A and the peak power was up to 170 mW. The near-field patterns of different currents clearly displayed hollow ring-shaped spots. The distribution curves of far-field light intensity matched the characteristics of a hollow beam as well. This novel VCSEL provides a new approach for the development of hollow beams and even array devices.
PANG Chao, YAN Chang-Ling, YANG Jing-Hang, QIAN Ran, LI Yi-Fei. A novel ring-shaped top-DBR etched microstructure VCSEL with a hollow beam[J]. Journal of Infrared and Millimeter Waves,2023,42(4):462~467
Copy
