A method to evaluate the thermal resistance of a laser by wavelength hysteresis
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Affiliation:

1.State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;3.State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences , Shanghai 200050, China;4.CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China

Clc Number:

O514.2;O433;O4-34;O551.1;O47

Fund Project:

Projects were supported by the National Natural Science Foundation of China ( 61875252, 92165202), the Strategic Priority Research Program (A) of Chinese Academy of Sciences (XDA18040300).

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    Abstract:

    Packaging is one of the key technologies of optoelectronic devices. It also determines the performance of the packaged device. In the article, a method based on wavelength hysteresis is proposed to evaluate the thermal resistance of the laser at ambient temperatures from 298 K to 10 K. The thermal resistance is characterized by calculating the value of wavelength hysteresis during the cooling and heating process. This method solves the problem that the heat dissipation performance of the laser cannot be evaluated at low temperatures. This is of great significance to the optical interconnection at low temperatures. It also provides a reference for the package design of lasers in a low-temperature environment.

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REN Jie, ZHEN Zhen, JIN Si-Yue, HAN Hai-Long, YUAN Pu-Sheng, LI Ling-Yun, YOU Li-Xing, WANG Zhen, XU Xing-Sheng. A method to evaluate the thermal resistance of a laser by wavelength hysteresis[J]. Journal of Infrared and Millimeter Waves,2023,42(3):377~382

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History
  • Received:October 29,2022
  • Revised:April 01,2023
  • Adopted:February 02,2023
  • Online: March 30,2023
  • Published:
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