The hetero-interface induced anomalous photoluminescence （PL） emissions in the vertical WS₂/Ga₂O₃ heterostructures was demonstrated. The WS₂/Ga₂O₃ hetero-interface varies type-II band structure and brings subsequent PL decline in the bottom WS₂ monolayer contacted with Ga₂O₃ layer. Such hetero-interlayer coupling interaction between oxides and 2D layered transition metal dichalcogenides （TMDs） in the stacked heterostructures impacts interlayer interaction between the bottom WS₂ monolayer and the upper WS₂ monolayer in a WS₂ bilayer， which leads to an anomalous PL enhancement in the bilayer WS₂. Stacked hetero-interface will benefit for controlling the optical or electronic behavior and modulating energy band structures by customizing transformative 2D heterostructures used in next-generation nanoscale optoelectronic detectors and photodetectors.