Band alignment engineering of bilayer WS2/Ga2O3 heterostructures with interface-dependent photoluminescence

1.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;3.College of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052, China;4.University of Chinese Academy of Sciences, Beijing 100049, China

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Supported by National Natural Science Foundation of China (92064014, 11933006), Science and Technology Commission of Shanghai Municipality (18J1414900) and Youth Innovation Promotion Association CAS

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    The hetero-interface induced anomalous photoluminescence (PL) emissions in the vertical WS2/Ga2O3 heterostructures was demonstrated. The WS2/Ga2O3 hetero-interface varies type-II band structure and brings subsequent PL decline in the bottom WS2 monolayer contacted with Ga2O3 layer. Such hetero-interlayer coupling interaction between oxides and 2D layered transition metal dichalcogenides (TMDs) in the stacked heterostructures impacts interlayer interaction between the bottom WS2 monolayer and the upper WS2 monolayer in a WS2 bilayer, which leads to an anomalous PL enhancement in the bilayer WS2. Stacked hetero-interface will benefit for controlling the optical or electronic behavior and modulating energy band structures by customizing transformative 2D heterostructures used in next-generation nanoscale optoelectronic detectors and photodetectors.

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YANG Wan-Li, HUANG Tian-Tian, ZHANG Le-Peng, XU Pei-Ran, JIANG Cong, LI Tian-Xin, CHEN Zhi-Min, CHEN Xin, DAI Ning. Band alignment engineering of bilayer WS2/Ga2O3 heterostructures with interface-dependent photoluminescence[J]. Journal of Infrared and Millimeter Waves,2023,42(2):162~168

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  • Received:September 14,2022
  • Revised:March 07,2023
  • Adopted:October 24,2022
  • Online: March 07,2023
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