Design of 230~250 GHz low noise amplifier based on 70 nm InP HEMT process

1.The 13th Research Institute, CETC,Shijiazhuang 050051, China;2.School of Transportation and Civil Engineering, Nantong University, Nantong 226019, China;3.School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China

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Supported by the National Natural Science Foundation of China (62201293,62034003)

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    Based on the 70 nm InP HEMT process, a 230~250 GHz low noise amplifier terahertz integrated circuit (TMIC) is designed. The amplifier adopts cascade structure of five common-source amplifiers to achieve low noise amplification. Based on the bias network which consists of microstrip radial stub and transmission line to isolate RF signals and DC bias signals. The first and second stages of the amplifier are designed based on noise matching technology, the middle two stages are designed based on power matching technology, and the last stage focuses on output matching. The on-chip test results show that the small signal gain of the LNA is greater than 20 dB in the frequency range of 230~250 GHz. The Y-factor method is used to complete the noise test of the encapsulated low noise amplifier module. The noise figure of the MMIC amplifier is better than 7.5 dB in the frequency range of 243~248 GHz. Compared with HBT and CMOS processes, the low noise amplifier based on HEMT process has a noise figure advantage of more than 3 dB.

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LIU Xing, MENG Fan-Zhong, CHEN Yan, ZHANG Ao, GAO Jian-Jun. Design of 230~250 GHz low noise amplifier based on 70 nm InP HEMT process[J]. Journal of Infrared and Millimeter Waves,2023,42(1):37~42

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  • Received:June 03,2022
  • Revised:January 03,2023
  • Adopted:August 08,2022
  • Online: January 03,2023
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