Design of 220GHz power amplifier based on 90nm InP HEMT process

1.The 13th Research Institute, CETC,Shijiazhuang 050051, China;2.School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China

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Supported by National Natural Science Foundation of China (62034003)

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    Based on the 90 nm InP HEMT process, a 220 GHz power amplifier terahertz integrated circuit design (TMIC) is designed. The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesis of two-way five stage common-source amplifiers. The on-wafer measurement results show that the average small signal gain of the power amplifier is 18 dB. The power test results show that the saturated output power of the power amplifier is better than 15.8 mW from 210 GHz to 230 GHz, with a maximum output power of 20.9 mW at 223 GHz. The size of the TMIC chip is 2.18 mm×2.40 mm.

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CHEN Yan, MENG Fan-Zhong, FANG Yuan, ZHANG Ao, GAO Jian-Jun. Design of 220GHz power amplifier based on 90nm InP HEMT process[J]. Journal of Infrared and Millimeter Waves,2022,41(6):1037~1041

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  • Received:May 11,2022
  • Revised:November 08,2022
  • Adopted:May 29,2022
  • Online: November 07,2022
  • Published: