1.College of Science， Harbin University of Science and Technology， Harbin 150080， China;2.State Key Laboratories of Transducer Technology，Shanghai Institute of Technical Physics， Chinese Academy of Sciences Shanghai 200083， China;3.State Key Laboratory of Infrared Physics， Shanghai Institute of Technical Physics， Chinese Academy of Sciences Shanghai 200083， China
Supported by National Natural Science Foundation of China （62075229，62175250）， the Shanghai Rising-Star Program （21QA1410600）， the International Science and Technology Cooperation Program of Shanghai （20520711200）， and the Program of Shanghai Academic/Technology Research Leader （21XD1404200）
The effects of molecular beam epitaxy growth parameters on the properties of high indium InGaAs materials have been investigated in this paper. The growth temperature， V/III ratio and arsenic dimer of In0.74Ga0.26As materials were investigated and adjusted to optimize the peak intensity of the photo luminescence and X-ray diffraction measurements， as well as background carrier concentration and mobility. Results show that moderate growth temperatures and V/III ratios are needed for the growth to improve the lattice quality， reduce the non-radiation recombination and decrease the background impurity concentration. The In0.74Ga0.26As materials grown using As2 dimer show better material quality than those using As4 dimer. For the material grown at 570 ℃， As2 dimer and V/III ratio of 18， relatively strong photo luminescence and X-ray diffraction peak intensity have been achieved. At room temperature and 77 K， the background carrier concentrations were 6.3×1014 cm-3 and 4.0×1014 cm-3， while the mobilities were 13 400 cm2/Vs and 45 160 cm2/Vs， respectively.
YANG Ying, WANG Hong-Zhen, FAN Liu-Yan, CHEN Ping-Ping, LIU Bo-Wen, HE Xun-Jun, GU Yi, MA Ying-Jie, LI Tao, SHAO Xiu-Mei, LI Xue. Study on Molecular Beam Epitaxy of High indium InGaAs Films[J]. Journal of Infrared and Millimeter Waves,2022,41(6):987~994Copy