Research on dark current characteristics of InAsSb Barrier-blocking infrared detector

Kunming Institute of Physics, Kunming 650223, China

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This work was supported by Young and Middle-aged Academic and Technical Leaders Reserve Talents Project, Yunnan Province (202205AC160054).

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    The carrier lifetimes determined by radiative and Auger 1 recombination in InAs1-xSbx were calculated at different temperatures. For n-type InAsSb material, at low temperatures, the carrier lifetime is limited by the radiative recombination, while at high temperatures, the Auger 1 process is dominant. An analytical model of dark current for barrier blocking detectors was discussed, by adding a heavily doped n-type InAsSb electrode on the other side of the absorber layer to form an nBnn+ structure to deplete the carriers in absorber, the hole concentration in absorption region was decreased about two orders of magnitude, further reducing the dark current of the devices. InAsSb-based nBnn+ barrier devices have been successfully fabricated and characterized. At 150 K, the devices displayed a dark current density as low as 3×10-6 A/cm2, the dark current density of the detectors was fitted by the nBn-based architecture analytical current model, the experimental results indicated that due to the p-type doping of the barrier layer, a depletion region was formed in the InAsSb absorber region, resulting in incomplete inhibition of G-R current. At temperatures below 180 K, the dark current of the detector is limited by G-R process, at temperatures above 180 K, the dark current of the device is limited by diffusion current.

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CHEN Dong-Qiong, WANG Hai-Peng, QIN Qiang, DENG Gong-Rong, SHANG Fa-Lan, TAN Ying, KONG Jin-Cheng, HU Zan-Dong, TAI Yun-Jian, YUAN Jun, ZHAO Peng, ZHAO Jun, YANG Wen-Yun. Research on dark current characteristics of InAsSb Barrier-blocking infrared detector[J]. Journal of Infrared and Millimeter Waves,2022,41(5):810~817

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  • Received:April 24,2022
  • Revised:September 16,2022
  • Adopted:May 23,2022
  • Online: June 30,2022
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