Kunming Institute of Physics， Kunming 650223， China
This work was supported by Young and Middle-aged Academic and Technical Leaders Reserve Talents Project， Yunnan Province （202205AC160054）.
The carrier lifetimes determined by radiative and Auger 1 recombination in InAs1-xSbx were calculated at different temperatures. For n-type InAsSb material， at low temperatures， the carrier lifetime is limited by the radiative recombination， while at high temperatures， the Auger 1 process is dominant. An analytical model of dark current for barrier blocking detectors was discussed， by adding a heavily doped n-type InAsSb electrode on the other side of the absorber layer to form an nBnn+ structure to deplete the carriers in absorber， the hole concentration in absorption region was decreased about two orders of magnitude， further reducing the dark current of the devices. InAsSb-based nBnn+ barrier devices have been successfully fabricated and characterized. At 150 K， the devices displayed a dark current density as low as 3×10-6 A/cm2， the dark current density of the detectors was fitted by the nBn-based architecture analytical current model， the experimental results indicated that due to the p-type doping of the barrier layer， a depletion region was formed in the InAsSb absorber region， resulting in incomplete inhibition of G-R current. At temperatures below 180 K， the dark current of the detector is limited by G-R process， at temperatures above 180 K， the dark current of the device is limited by diffusion current.
CHEN Dong-Qiong, WANG Hai-Peng, QIN Qiang, DENG Gong-Rong, SHANG Fa-Lan, TAN Ying, KONG Jin-Cheng, HU Zan-Dong, TAI Yun-Jian, YUAN Jun, ZHAO Peng, ZHAO Jun, YANG Wen-Yun. Research on dark current characteristics of InAsSb Barrier-blocking infrared detector[J]. Journal of Infrared and Millimeter Waves,2022,41(5):810~817Copy