The carrier lifetimes determined by radiative and Auger 1 recombination in InAs1-xSbx were calculated at different temperatures. For n-type InAsSb material, at low temperatures, the carrier lifetime is limited by the radiative recombination, while at high temperatures, the Auger 1 process is dominant. An analytical model of dark current for barrier blocking detectors was discussed, by adding a heavily doped n-type InAsSb electrode on the other side of the absorber layer to form an nBnn+ structure to deplete the carriers in absorber, the hole concentration in absorption region was decreased about two orders of magnitude, further reducing the dark current of the devices. InAsSb-based nBnn+ barrier devices have been successfully fabricated and characterized. At 150 K, the devices displayed a dark current density as low as 3×10-6 A/cm2, the dark current density of the detectors were fitted by the nBn-based architecture analytical current model, the experimental results indicated that due to the p-type doping of the barrier layer, a depletion region was formed in the InAsSb absorber region, resulting in incomplete inhibition of G-R current. At temperatures below 180 K, the dark current of the detector is limited by G-R process, at temperatures above 180 K, the dark current of the device is limited by diffusion current.