Design of high-frequency circuit for W-band CW sheet beam extended-interaction klystron
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Affiliation:

1.Key Laboratory of Science and Technology on High Power Microwave Sources and Technologies,Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China;2.School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Clc Number:

TN122

Fund Project:

Supported by National Natural Science Foundation of China (61531002, 61571418), National MCF Energy R&D Program (2018YFE0305100)

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    Abstract:

    To solve the problem that W-band klystron is difficult to achieve CW (continuous wave) high power, we propose a W-band CW sheet beam extended-interaction klystron (EIK) high frequency circuit operating at TM31-2π mode. A sheet electron beam with a voltage of 20 kV, a current of 0.65 A and the dimension of 2.5 mm×0.3 mm is used. The high frequency system adopts five dumbbell type five-gap cavities and the output system adopts symmetrical output waveguide. By optimizing high-frequency structural parameters, the simulation results of 3D PIC show that more than 1200 W power can be obtained at an input power of 0.2 W, and the electron efficiency and gain are 9.35% and 37.8 dB respectively. In terms of sensitivity and error stability of high-frequency parameters, TM31 mode and TM11 mode are compared and analyzed in detail.

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JIN Qi, GENG Zhi-Hui, ZHANG Jian, ZHANG Rui, YANG Xiu-Dong, LIAO Yun-Feng, XU Shou-Xi. Design of high-frequency circuit for W-band CW sheet beam extended-interaction klystron[J]. Journal of Infrared and Millimeter Waves,2022,41(6):1030~1036

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History
  • Received:April 22,2022
  • Revised:November 08,2022
  • Adopted:May 16,2022
  • Online: November 07,2022
  • Published:
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