1.Key Laboratory of Science and Technology on High Power Microwave Sources and Technologies，Aerospace Information Research Institute， Chinese Academy of Sciences， Beijing 100190， China;2.School of Electronic， Electrical and Communication Engineering， University of Chinese Academy of Sciences， Beijing 100049， China
Supported by National Natural Science Foundation of China （61531002， 61571418）， National MCF Energy R&D Program （2018YFE0305100）
To solve the problem that W-band klystron is difficult to achieve CW （continuous wave） high power， we propose a W-band CW sheet beam extended-interaction klystron （EIK） high frequency circuit operating at TM31-2π mode. A sheet electron beam with a voltage of 20 kV， a current of 0.65 A and the dimension of 2.5 mm×0.3 mm is used. The high frequency system adopts five dumbbell type five-gap cavities and the output system adopts symmetrical output waveguide. By optimizing high-frequency structural parameters， the simulation results of 3D PIC show that more than 1200 W power can be obtained at an input power of 0.2 W， and the electron efficiency and gain are 9.35% and 37.8 dB respectively. In terms of sensitivity and error stability of high-frequency parameters， TM31 mode and TM11 mode are compared and analyzed in detail.
JIN Qi, GENG Zhi-Hui, ZHANG Jian, ZHANG Rui, YANG Xiu-Dong, LIAO Yun-Feng, XU Shou-Xi. Design of high-frequency circuit for W-band CW sheet beam extended-interaction klystron[J]. Journal of Infrared and Millimeter Waves,2022,41(6):1030~1036Copy