Effect of polarity of CdZnTe substrate on slider liquid phase epitaxy of HgCdTe

Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083,China

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Supported by National Key R&D Program of China(2018YFB0504700); Shanghai Sailing Program(19YF1454800)

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    The effect of CdZnTe substrates with different polarity (111) plane on slider liquid phase epitaxalgrowth of Hg1-xCdxTe was studied. The experimental results show that the composition and thickness of HgCdTe films grown by slider liquid phase epitaxy on (111)A surface CdZnTe substrate were equivalent to those on conventional (111)B surface CdZnTe substrate; the contact angles between HgCdTe melt and (111) A surface and (111) B surface of HgCdTe films grown on CdZnTe substrate were respectively 50±2° and 30±2°, and it is confirmed that the surface tension between HgCdTe melt and (111) A surface of HgCdTe film is larger combined with micro model analysis; the difference between the surface morphology of HgCdTe film grown on (111) A surface and that on (111) B surface was observed and discussed; the FWHM of the HgCdTe film grown on (111) A surface was 33.1 arcsec. The effect of (111) plane polarity on melt droplet is reported for the first time, and the results show that slider liquid phase epitaxy of Hg1-xCdxTe on (111) A surface CdZnTe substrate can greatly reduce melt droplet of the film without reducing the crystal quality.

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HUO Qin, ZHANG Cheng, JIAO Cui-Ling, WANG Reng, MAO Cheng-Ming, LU Ye, QIAO Hui, LI Xiang-Yang. Effect of polarity of CdZnTe substrate on slider liquid phase epitaxy of HgCdTe[J]. Journal of Infrared and Millimeter Waves,2023,42(1):1~7

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  • Received:March 17,2022
  • Revised:January 10,2023
  • Adopted:September 23,2022
  • Online: January 03,2023
  • Published: