1.Institute of Applied Electronics， CAEP， Mianyang 621900， China;2.Key Laboratory of Science and Technology on High Energy Lasers， CAEP， Mianyang 621900， China
Supported by National Natural Science Foundation of China （11804322）， the Innovation and Development Fund of CAEP （C-2020-CX2019035）
The considerations in the epitaxial and longitudinal design of a supper-large-optical-cavity structure diode laser in the 976-nm band are numerically studied and presented here. Mode control layers were designed underneath and up the quantum well layer to suppress the lasing of high-order transverse modes. The electron leakage was suppressed by a band energy engineering， where the electron barrier increases from the p-waveguide layer to the p-cladding layer. The optimized structure has an internal loss of 0.66 cm-1， an internal quantum efficiency of 0.954， and a full width at half maximum vertical far-field angle of 17.4°. For the resonant cavity design， a liner current profile along the cavity was proposed to reduce the longitudinal spatial hole burning effect， where a power penalty of 1.0 W at 20 A is suppressed. The 4-mm-long and 100 μm wide broad-area single emitter with the supper-large-optical-cavity epitaxial structure was designed to have a high power-efficiency of about 71% at an output power of 21 W under continuous current injection at 25°C.
ZHOU Kun, HE Lin-An, Li Yi, HE Yu-Wen, DU Wei-Chuan, LIU Sheng-Zhe, ZHANG Liang, HU Yao, SONG Liang, GAO Song-Xin, TANG Chun. Design considerations to increase the power-efficiency of a supper-large-optical-cavity waveguide structure diode laser[J]. Journal of Infrared and Millimeter Waves,2022,41(6):958~964Copy