Planar wavelength-extended In0.75Ga0.25As detector with 2.2-μm cut-off wavelength
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Shanghai Institute of Technical Physics

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    Abstract:

    Abstract: Planar-type 2.2-μm wavelength-extended InGaAs photodetectors (PDs) using the sealed-ampoule diffusion method was reported. The zinc arsenide powder was used as the dopant source, which was driven into the cap of the In0.75Al0.25As/In0.75Ga0.25As/In0.75Al0.25As hetero structure materials grown by molecular beam epitaxy (MBE), using a SiNx as diffusion mask deposited by ICP-CVD. The junction depth, the lateral collection width of photogenerated carriers, the I-V characteristics, the spectral response and the detectivity of the detector at different temperatures were analyzed. The results indicate that the PD exhibits a low dark current density of 0.69×10?9A/cm2 at -10mV at 150K. The cutoff wavelength and peak wavelength were 2.12μm and 1.97μm. The peak detectivity, peak responsivity and quantum efficiency was 1.01×1012cm·Hz1/2/W, 1.29A/W and 82% respectively. These results suggest that the planar-type InGaAs can reach high performance. Key words-wavelength-extended;InAlAs/InGaAs;diffusion;dark current density;quantum efficiency PACS : TN215

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History
  • Received:February 16,2022
  • Revised:April 26,2022
  • Adopted:April 27,2022
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