Study on As diffusion control of MBE-grown P-on-N HgCdTe

1.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

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Supported by Youth Innovation Promotion Association CAS;Shanghai Natural Science Foundation (21ZR1473500)

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    As diffusion control caused by the thermal annealing of in-situ As-doped HgCdTe grown by molecular beam epitaxy (MBE) was studied. HgCdTe with controllable As diffusion length is obtained at a lower annealing temperature, which is easy to form a PN junction profile that meets the design parameters. It provides a basis for the subsequent development of new HgCdTe FPA devices. It is found that the longitudinal distribution of As concentration of the in-situ As-doped HgCdTe changed under different Hg pressures during the thermal annealing process. And through theoretical calculations, As diffusion coefficients under different Hg pressures are obtained. Meanwhile, the dark current simulation of HgCdTe P-on-N structure with different As diffusion lengths was carried out through numerical simulation, which verified the importance of deep-advancing process for As-doped HgCdTe PN junction.

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SHEN Chuan, YANG Liao, LIU Yang-Rong, BU Shun-Dong, WANG Gao, CHEN Lu, HE Li. Study on As diffusion control of MBE-grown P-on-N HgCdTe[J]. Journal of Infrared and Millimeter Waves,2022,41(5):799~803

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  • Received:February 15,2022
  • Revised:September 06,2022
  • Adopted:April 21,2022
  • Online: September 05,2022
  • Published: