Room-temperature THz detection via EIW effect based on graphite nanosheet
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1.Department of Applied Physics, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, China;2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China;3.Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China;4.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1, Sub-Lane Xiangshan, Xihu District, 310024, Hangzhou, China

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This work was supported by the National Natural Science Foundation of China (Grants No. 61625505, 12134016), Chinese Academy of Sciences (Grants No. ZDBS-LY-JSC025) and Shanghai Municipal Science and Technology Major Project (Grant No.2019SHZDZX01).

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    Abstract:

    We demonstrate a room-temperature sub-terahertz photoconductive detector based on graphite nanosheet (GN) using electromagnetic induced well (EIW) effect produced in the metal-GN-metal structure. The detector achieves high performance of room-temperature THz detection. It shows a responsivity of over 20 kV/W at 0.035 THz and 11 kV/W at 0.1673 THz, as well as NEP of about 1.25 pW/Hz1/2 at 0.035 THz and 2.27 pW/Hz1/2 at 0.1673 THz, respectively. The results open up a new idea for graphene-based THz detection.

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History
  • Received:February 03,2022
  • Revised:March 01,2022
  • Adopted:February 25,2022
  • Online: February 28,2022
  • Published: