High power 793 nm diode lasers
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Institute of Applied Electronics, CAEP, Mianyang, 621900, China

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    Abstract:

    To satisfy the needs of Thulium-doped fiber laser pump source, 793 nm high-power semiconductor laser emitters and fiber-coupled module are developed. The laser epitaxy adopts the asymmetric large optical cavity waveguide structure to reduce the mode loss. The waveguide adopts aluminum free GaInP material which improves the facet damage threshold combined with vacuum cleavage passivation process. Through the optimization of epitaxial structure and facet coating, the output power of the developed laser reaches 12 W@11A, passed the 300 hours aging test at 8 W. Seven single emitters were space coupled into 100 μ m 0.22 NA fiber module. The output power of the model is 40 W@7A, and the electro-optical efficiency is 49.5% @ 40 W.

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History
  • Received:January 21,2022
  • Revised:February 17,2022
  • Adopted:February 17,2022
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