Monolithic master oscillator high efficiency diode laser with nearly diffraction-limited narrowband emission and 10 W of optical output power
Author:
Affiliation:

1.Key Laboratory of Science and Technology on High Energy Lasers, CAEP, Mianyang 621900, China;2.Institute of Applied Electronics, CAEP, Mianyang 621900, China

Clc Number:

TN3

Fund Project:

the National Natural Science Foundation of China (11804322) , the Innovation and Development Fund of CAEP (C-2020-CX2019035)

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    Abstract:

    High-power semiconductor laser with nearly diffraction limited narrowband emission was designed and fabricated. The monolithic master oscillator power-amplifier (MOPA) diode laser consists of distributed Bragg gratings, a narrow ridge waveguide and a tapered amplifier. The ridge waveguide with length of 8 mm and width of 3 μm is used as the single-mode seed source. A tapered gain section with length of 7 mm and a full taper angle of 3.3° amplify the seed power. The fabricated device reach an output power of 10.3 W with a slow axis beam quality M2 (1/e2) factor of 1.06 and an electro-optic efficiency of 50.5% . The spectral linewidth is 40 pm (3 dB), and a central wavelength tuning range of 4 nm was realized by the integrated Bragg gratings micro heater.

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DU Wei-Chuan, HE Lin-An, LI Yi, HE Yu-Wen, XIE Peng-Fei, ZHOU Kun, ZHANG Liang, LIU Sheng-Zhe, GAO Song-Xin, TANG Chun. Monolithic master oscillator high efficiency diode laser with nearly diffraction-limited narrowband emission and 10 W of optical output power[J]. Journal of Infrared and Millimeter Waves,2023,42(1):21~25

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History
  • Received:January 14,2022
  • Revised:January 06,2023
  • Adopted:February 17,2022
  • Online: January 06,2023
  • Published: