Institute of Applied Electronics, CAEP, Mianyang, 621900, China
the National Natural Science Foundation of China (Grant No. 11804322) , the Innovation and Development Fund of CAEP (Grant No. C-2020-CX2019035)
High-power semiconductor laser with nearly diffraction limited narrowband emission was designed and fabricated. The monolithic master oscillator (MOPA) diode laser consists of distributed Bragg gratings, a narrow ridge waveguide and a tapered amplifier. The ridge waveguide with length of 8 mm and width of 3 μm is used as the single-mode seed source. A tapered gain section with length of 7 mm and a full taper angle of 3.3° amplify the seed power. The fabricated device reach an output power of 10.1 W with a slow axis beam quality M2 (1/e2) factor of 1.06 and an electro-optic efficiency of 50.5% at 10.1 W. The spectral linewidth is 40 pm (3dB), and a central wavelength tuning range of 4 nm was realized by the integrated Bragg gratings micro heater.