1.Key Laboratory of Science and Technology on High Energy Lasers， CAEP， Mianyang 621900， China;2.Institute of Applied Electronics， CAEP， Mianyang 621900， China
the National Natural Science Foundation of China （11804322） ， the Innovation and Development Fund of CAEP （C-2020-CX2019035）
High-power semiconductor laser with nearly diffraction limited narrowband emission was designed and fabricated. The monolithic master oscillator power-amplifier （MOPA） diode laser consists of distributed Bragg gratings， a narrow ridge waveguide and a tapered amplifier. The ridge waveguide with length of 8 mm and width of 3 μm is used as the single-mode seed source. A tapered gain section with length of 7 mm and a full taper angle of 3.3° amplify the seed power. The fabricated device reach an output power of 10.3 W with a slow axis beam quality M2 （1/e2） factor of 1.06 and an electro-optic efficiency of 50.5% . The spectral linewidth is 40 pm （3 dB）， and a central wavelength tuning range of 4 nm was realized by the integrated Bragg gratings micro heater.
DU Wei-Chuan, HE Lin-An, LI Yi, HE Yu-Wen, XIE Peng-Fei, ZHOU Kun, ZHANG Liang, LIU Sheng-Zhe, GAO Song-Xin, TANG Chun. Monolithic master oscillator high efficiency diode laser with nearly diffraction-limited narrowband emission and 10 W of optical output power[J]. Journal of Infrared and Millimeter Waves,2023,42(1):21~25Copy