Terahertz Schottky Diode Characterization and On-wafer Measurement
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School of Physics and Electronic Science,East China Normal University,Shanghai

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O43

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    Abstract:

    In this paper, the one-port he two-port measurement methods for millimeter wave Schottky diodes are developed, and the corresponding test structures are designed. The variation of cut-off frequency with parasitic resistance and zero bias intrinsic capacitance are analyzed. The equivalent circuit models of small signal and large signal are given. A commercial Schottky diode has used to extract the small signal model parameters. The experimental results show that the S-parameters agree well under on and off bias condition.

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History
  • Received:January 11,2022
  • Revised:January 24,2022
  • Adopted:March 08,2022
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