Design of a novel Y-junction electro-optic modulator based on thin film lithium niobite

1.Institute of Semiconductors, Chinese Academy of Sciences;2.State Key Laboratory of Inertial Technology, Beijing Institute of Automatic Control Equipment

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Science and Technology Project of State Grid Corporation of China (No. 5700-202058482A-0-0-00);National Key Research and Development Program of China(NO.2019YFB2203802)

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    In recent years, the high-performance electro-optic modulator based on Thin-film lithium niobate (TFLN) platform has been receiving considerable attention due to the featuring small-footprint and low energy loss. In this paper, a novel Y-junction electro-optic modulator with a vertical electrode structure was designed based on TFLN. The relationship between the low half-wave voltage and the buffer layer thickness for the novel modulator was investigated. Meanwhile, the design parameters of Y-junction were optimized, and found that the half-wave voltage is less than 1.5 V and the insertion loss is less than 5 dB. Finally, the Y-junction electro-optic modulator was fabricated. This study not only provides insights on the design and realization of compact footprint photonic waveguides in TFLN platform, but also, experimental evidences for fabrication of electro-optic modulator with high-performance and multifunction.

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  • Received:August 16,2021
  • Revised:September 13,2021
  • Adopted:September 17,2021
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