1.Key Laboratory of Semiconductor Materials Science， Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;2.College of Materials Science and Opto-electronic Technology， University of Chinese Academy of Sciences， Beijing 100049， China;3.Key Lab of Nanodevices and Applications， Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences， Suzhou 215123， China
Supported by National Natural Science Foundation of China （61904175）
Total reflection X-ray fluorescence spectroscopy （TXRF） and X-ray photo-electron spectroscopy （XPS） have been used to investigate residual impurities and oxides on polished InAs substrate surface wet cleaned by different solution combination. Metal impurities Si， K and Ca are routinely detected on the cleaned InAs surface and their concentration change with the variation of solution combination. A large quantity of particles （80 nm size） is measured on the InAs substrate surface with higher residual impurity concentration. An effective wet chemical cleaning procedure is presented to prepare InAs substrate surface with less residual impurity， small particle quantity and thin oxide layer， which are beneficial to high quality epitaxial growth.
LIU Li-Jie, ZHAO You-Wen, HUANG Yong, ZHAO Yu, WANG Jun, WANG Ying-Li, SHEN Gui-Ying, XIE Hui. Preparation of epi-ready InAs substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD[J]. Journal of Infrared and Millimeter Waves,2022,41(2):420~424Copy