The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes

Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Clc Number:

TN 304.2;TN314+.2

Fund Project:

Supported by the Shanghai Youth Science and technology talents sailing plan (18YF1427400)

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    The characterizations of CdTe film deposited by molecular beam epitaxy (MBE) in-suit had been studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM).The cross-hatch pattern can be seen on the CdTe film surface. The roughness of CdTe film deposited by MBE in-suit on HgCdTe is about 1~2 nm. The minority carrier lifetime of HgCdTe passivated by CdTe in-suit is larger than the HgCdTe passivated by the CdTe deposited by E-beam evaporation after etched top 1um HgCdTe at 77 K. The I-V characteristics of MW photodiodes passivated by the CdTe in-suit are similar with the photodiodes passivated by the CdTe/ZnS films.

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XIE Xiao-Hui, LIN Chun, CHEN Lu, ZHAO Yu, ZHANG Jing, HE Li. The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes[J]. Journal of Infrared and Millimeter Waves,2022,41(2):413~419

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  • Received:May 27,2021
  • Revised:February 08,2022
  • Adopted:December 22,2021
  • Online: March 31,2022
  • Published: