Study of the passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes

Shanghai Institute of Technical Physics,Chinese Academy of Sciences

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TN 304.2;TN314

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    The characterizations of CdTe film deposited by molecular beam epitaxy (MBE) in-suit have been studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM).The cross-hatch pattern can be seen on the CdTe film surface. The roughness of CdTe film deposited by MBE in-suit on HgCdTe is about 1~2nm. The minority carrier lifetime of HgCdTe passivated by CdTe in-suit is larger than the HgCdTe passivated by the CdTe deposited by E-beam evaporation after etched top 1um HgCdTe at 77K.The IV characteristics of MW photodiodes passivated by the CdTe in-suit are similar with the photodiodes passivated by the CdTe/ZnS films.

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  • Received:May 27,2021
  • Revised:December 21,2021
  • Adopted:December 22,2021
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