1.School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xi’an 710071;2.China;3.ZTE Corporation
Key Researchand Development Program of Shaanxi(Key Researchand Development Program of Shaanxi)
In this paper, a distributed small signal equivalent circuit modeling method for InP HEMT is presented. The distributed capacitance effect is taken into account in the adopted model, which is characterized by adding three distributed capacitances. For accurate modeling, considering the error caused by parasitic inductance when extracting parasitic capacitance, the parasitic inductance is extracted first. The validity of the proposed small signal modeling method has been verified with excellent agreement between the measured and modeled S-parameters up to 50GHz for InP HEMT. In addition, the proposed S-parameters fitting error is less than 4% in 2~50 GHz, which also proves the applicability of the proposed modeling methods for InP HEMT.