Design and Realization of InP-based Resonant Tunneling Diode THz Oscillator
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1.Beijing Institute of Technology;2.54th Research Institute, China Electronics Technology Group Corporation (CETC54);3.The National Key Laboratory of ASIC, Hebei Semiconductor Research Institute

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    Abstract:

    Above 1 THz InP-based resonant tunneling diode (RTD) oscillator was designed and realization with Si-lens package. The RTD model was build and studied using Silvaco software including the influence of the doping concentration of emitter, the thickness of the barrier layer, space layer and well layer on the DC characteristics of the device. The DC measurement of the RTD shows peak current density Jp is 359.2 kA/cm2, valley current density Jv is 135.8 kA/cm2, peak-to-valley current ratio (PVCR) is 2.64, maximum RF output power of 1.71 mW and oscillation frequency (fmax) of 1.49 THz are theoretically calculated. The oscillator with an on-chip Bow-tie antenna has been packaged with Si-lens and the measurement shows the output power of 2.57 μW at an operation frequency of above 1 THz, the DC power consumption is 8.33 mW. This is the first reported oscillator of frequency above 1 THz in domestic.

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History
  • Received:April 25,2021
  • Revised:May 17,2021
  • Adopted:May 18,2021
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