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Home > Archive>Volume 41, Issue 2, 2022 >389-394. DOI:10.11972/j.issn.1001-9014.2022.02.003
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High performance Ge:B blocked impurity band detector developed using near-surface processing techniques
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Affiliation:

1.State Key Laboratory of Infrared Physics， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;2.University of Chinese Academy of Sciences， Beijing 100049， China;3.Hangzhou Institute for Advanced Study， University of Chinese Academy of Sciences， Hangzhou 310024， China

Clc Number:

TN36

Fund Project:

Supported by National Natural Science Foundation of China （11933006）， and the Frontier Science Research Project （Key Programs） of the Chinese Academy of Sciences （QYZDJ-SSW-SLH018）

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    Abstract:

    Blocked impurity band （BIB） detectors are the state-of-the-art choice for far infrared astronomical observation. Ge：B BIB far infrared detector has been successfully developed using near-surface processing techniques. The spectral response covers a wide range from 50 cm-1 to 400 cm-1. At a temperature of 3.5 K and a working voltage of 30 mV， the detector exhibits a highly competitive responsivity of 21.46 A?W-1 and a highly competitive detectivity of 4.34×1014 cm?Hz1/2?W-1 at the peak response of 84.9 cm-1. The influence of the interfacial barriers on the spectral response is investigated. A new excitation model that the carriers in the contact regions can be excited over the interfacial barriers is proposed. Moreover， a new method to enhance the relative response intensity of BIB detectors in the low wavenumber region is found.

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PAN Chang-Yi, MOU Hao, YAO Xiao-Mei, HU Tao, WANG Yu, WANG Chao, DENG Hui-Yong, DAI Ning. High performance Ge:B blocked impurity band detector developed using near-surface processing techniques[J]. Journal of Infrared and Millimeter Waves,2022,41(2):389~394

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History
  • Received:April 13,2021
  • Revised:April 04,2022
  • Adopted:May 14,2021
  • Online: March 31,2022
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