High performance Ge:B blocked impurity band detector developed by the near surface process technique
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Affiliation:

1.Shanghai Institute of Technical Physics,Chinese Academy of Science;2.University of Chinese Academy of Sciences;3.Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences

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Fund Project:

the National Natural Science Foundation of China (11933006) and the Frontier Science Research Project (Key Programs) of the Chinese Academy of Sciences (QYZDJ-SSW-SLH018)

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    Abstract:

    Blocked impurity band (BIB) detectors are the start-of-art choice for far infrared astronomical observation. Ge:B BIB far infrared detector has been successfully developed using near surface process technique. The spectral response covers a wide range from 50 cm^(-1) to 400 cm^(-1). At 3.5 K and at 30 mV, the detector exhibits a highly competitive responsivity 21.46 A/W and a highly competitive detectivity of 4.34×10^14 cm?Hz1/2?W-1 at the peak response of 84.9 cm^(-1). We have studied the influence of the interfacial barriers on the spectral response. A new excitation model that the carriers in the contact regions can be excited over the interfacial barriers is proposed. A new method to enhance the relative response intensity of BIB detectors in the low wavenumber region is found.

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History
  • Received:April 13,2021
  • Revised:May 11,2021
  • Adopted:May 14,2021
  • Online:
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