High performance Ge:B blocked impurity band detector developed using near-surface processing techniques

1.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.University of Chinese Academy of Sciences, Beijing 100049, China;3.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

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Supported by National Natural Science Foundation of China (11933006), and the Frontier Science Research Project (Key Programs) of the Chinese Academy of Sciences (QYZDJ-SSW-SLH018)

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    Blocked impurity band (BIB) detectors are the state-of-the-art choice for far infrared astronomical observation. Ge:B BIB far infrared detector has been successfully developed using near-surface processing techniques. The spectral response covers a wide range from 50 cm-1 to 400 cm-1. At a temperature of 3.5 K and a working voltage of 30 mV, the detector exhibits a highly competitive responsivity of 21.46 A?W-1 and a highly competitive detectivity of 4.34×1014 cm?Hz1/2?W-1 at the peak response of 84.9 cm-1. The influence of the interfacial barriers on the spectral response is investigated. A new excitation model that the carriers in the contact regions can be excited over the interfacial barriers is proposed. Moreover, a new method to enhance the relative response intensity of BIB detectors in the low wavenumber region is found.

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PAN Chang-Yi, MOU Hao, YAO Xiao-Mei, HU Tao, WANG Yu, WANG Chao, DENG Hui-Yong, DAI Ning. High performance Ge:B blocked impurity band detector developed using near-surface processing techniques[J]. Journal of Infrared and Millimeter Waves,2022,41(2):389~394

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  • Received:April 13,2021
  • Revised:April 04,2022
  • Adopted:May 14,2021
  • Online: March 31,2022
  • Published: