0.825 THz GaAs monolithic integrated sub-harmonic mixer

1.Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;2.University of Chinese Academy of Sciences, Beijing 100049, China;3.Southern University of Science and Technology, Shenzhen 518055, China

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Foundation tiem: Youth Innovation Promotion Association CAS (E1213A04)

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    A sub-harmonic monolithic mixer with a center frequency of 0.825 THz is developed based on GaAs monolithic microwave integrated circuit technology. The parasitic parameters of the anti-parallel Schottky diode at the terahertz frequency are analyzed to improve the circuit design. The monolithic circuit is suitable for terahertz devices with the characteristics of high integration and little fabrication deviation. Meanwhile, the beamlead circuit is used to reduce the loss of substrate and installation position offset. Measured results show that the single-sideband (SSB) conversion loss of the mixer is lower than 33 dB in the frequency range 0.81~0.84 THz, and the minimum SSB conversion loss is 28 dB.

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LIU Si-Yu, ZHANG De-Hai, MENG Jin, JI Guang-Yu, ZHU Hao-Tian, HOU Xiao-Xiang, ZHANG Qing-Feng.0.825 THz GaAs monolithic integrated sub-harmonic mixer[J]. Journal of Infrared and Millimeter Waves,2021,40(6):749~753

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  • Received:March 09,2021
  • Revised:December 01,2021
  • Adopted:April 20,2021
  • Online: November 29,2021
  • Published: