InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer

1.Institute of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;2.Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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Supported by the National High Technology Research and Development Program of China (2018YFB2003305), the Key R&D Program of Jiangsu Province ( BE2018005), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences (KFJ-STS-ZDTP-086), the Support From SINANO (Y8AAQ11003), Natural Science Foundation of Jiangsu Province (BK20180252)Foundation items:GU Yu-Qiang(1995-),male, Taizhou China. Master, Research area focus on performance simulation and process preparation of avalanche photodiode.

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    In this paper, the trade-off between gain-bandwidth product (GBP) and dark current of an InAlAs/InGaAs avalanche photodiode (APD) was studied by optimizing multiplication layer. An optimized multiplication layer with 200 nm was proposed to improve the GBP and reduce the dark current. The fabricated InAlAs/InGaAs APD shows an excellent performance which is consistent with the calculated results. A high responsivity of 0.85 A/W (M=1) at 1.55 μm and a high GBP of 155 GHz was achieved, whereas the dark current is as low as 19 nA at 0.9 Vb. This study is significant to the future high-speed transmission application of the avalanche photodiodes.

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GU Yu-Qiang, TAN Ming, WU Yuan-Yuan, LU Jian-Ya, LI Xue-Fei, LU Shu-Long. InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer[J]. Journal of Infrared and Millimeter Waves,2021,40(6):715~720

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  • Received:March 04,2021
  • Revised:December 01,2021
  • Adopted:April 09,2021
  • Online: November 29,2021
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