980 nm high-power tapered semiconductor laser with high order gratings

1.State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;2.Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China

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Supported by the National Science and Technology Major Project of China (2018YFB0504600, 2017YFB0405102), National Natural Science Foundation of China (61904179, 62004194), Science and Technology Development Project of Jilin Province (20200401062GX)

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    In order to obtain high power, narrow line width and near diffraction limit output semiconductor laser diodes, the high order Bragg gratings (HOBGs) and master oscillator power-amplifier (MOPA) have been fabricated in the waveguide of HOBGs-MOPA laser diodes with an emission wavelength of 980 nm. The longitudinal mode of HOBGs-MOPA was selected by the HOBGs with a period of 11.37 μm. The single-mode optical power is amplified by a tapered waveguide with an angle of 6°. In this paper, we present a single mode laser diode with continuous wave power 2.8 W at a 3 dB line-width of 31 pm. The laser diode operates in a close to diffraction-limited optical mode (M 2=2.51, laterally).

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LANG Xing-Kai, JIA Peng, QIN Li, CHEN Yong-Yi, LIANG Lei, LEI Yu-Xin, SONG Yue, QIU Cheng, WANG Yu-Bing, NING Yong-Qiang, WANG Li-Jun.980 nm high-power tapered semiconductor laser with high order gratings[J]. Journal of Infrared and Millimeter Waves,2021,40(6):721~724

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  • Received:February 07,2021
  • Revised:December 15,2021
  • Adopted:March 16,2021
  • Online: November 29,2021
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