1.State Key Laboratory of Luminescence and Application， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China;2.Daheng College， University of Chinese Academy of Sciences， Beijing 100049， China
Supported by the National Science and Technology Major Project of China （2018YFB0504600， 2017YFB0405102）， National Natural Science Foundation of China （61904179， 62004194）， Science and Technology Development Project of Jilin Province （20200401062GX）
In order to obtain high power， narrow line width and near diffraction limit output semiconductor laser diodes， the high order Bragg gratings （HOBGs） and master oscillator power-amplifier （MOPA） have been fabricated in the waveguide of HOBGs-MOPA laser diodes with an emission wavelength of 980 nm. The longitudinal mode of HOBGs-MOPA was selected by the HOBGs with a period of 11.37 μm. The single-mode optical power is amplified by a tapered waveguide with an angle of 6°. In this paper， we present a single mode laser diode with continuous wave power 2.8 W at a 3 dB line-width of 31 pm. The laser diode operates in a close to diffraction-limited optical mode （M 2=2.51， laterally）.
LANG Xing-Kai, JIA Peng, QIN Li, CHEN Yong-Yi, LIANG Lei, LEI Yu-Xin, SONG Yue, QIU Cheng, WANG Yu-Bing, NING Yong-Qiang, WANG Li-Jun.980 nm high-power tapered semiconductor laser with high order gratings[J]. Journal of Infrared and Millimeter Waves,2021,40(6):721~724Copy