InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers
Author:
Affiliation:

1.Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, PR China;2.State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;4.University of Chinese Academy of Science, Beijing 100049, China;5.Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden

Clc Number:

TN215

Fund Project:

Supported by the National Natural Science Foundation of China (Nos. 62075229 and 61775228), and the International Science and Technology Cooperation Program of Shanghai (No.20520711200)

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    InAs/In0.83Al0.17As quantum wells have been demonstrated on In0.83Al0.17As metamorphic layers on GaP/Si substrates. The effects of GaxIn1-xP and GaAsyP1-y graded buffer layers on the sample performances are investigated. The sample with GaxIn1-xP metamorphic buffer layer has narrower width in X-ray diffraction reciprocal space maps, indicating less misfit dislocations in the sample. Mid-infrared photoluminescence signals have been observed for both samples at room temperature, while the sample with GaxIn1-xP metamorphic buffer shows stronger photoluminescence intensity at all temperatures. The results indicate the metamorphic buffers with mixed cations show superior effects for the mid-infrared InAs quantum wells on GaP/Si composite substrates.

    Reference
    Related
    Cited by
Get Citation

HUANG Wei-Guo, GU Yi, JIN Yu-Hang, LIU Bo-Wen, GONG Qian, HUANG Hua, WANG Shu-Min, MA Ying-Jie, ZHANG Yong-Gang. InAs quantum wells grown on GaP/Si substrate with Ga(In, As)P metamorphic buffers[J]. Journal of Infrared and Millimeter Waves,2022,41(1):216~224

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:January 20,2021
  • Revised:January 13,2022
  • Adopted:March 02,2021
  • Online: January 10,2022
  • Published: