An effective enhancement of the photoluminescence from the Si⁺/Ni⁺ ions co-implanted silicon-on-insulator （SOI） by directly constructing the Au nanodisk-array photonic crystals is reported. The finite-difference time-domain method （FDTD） was employed to design and analyze the luminescence amplification of the metal film with a photonic crystal structure for luminesce from the optical defects in the SOI. The Langmuir-Blodgett （LB） method and inductively coupled plasma （ICP） etching were used to fabricate the etched Au-nanostructure photonic crystal directly on the top of SOI wafers. It indicates that the introduction of polystyrene （PS） spheres can effectively improve the luminescent efficiency in the near infrared waveband. This photonic crystal with simply fabricating processes and high efficiency exhibits great application on the optical quantum of Si-based photonics.