1.School of Optical-Electrical and Computer Engineering， University of Shanghai for Science and Technology， Shanghai 200093， China;2.Chongqing Institute of East China Normal University， Chongqing 401147， China;3.State Key Laboratory of Precision Spectroscopy， East China Normal University， Shanghai 200062， China
Supported by National Natural Science Foundation of China （11604209）， Shanghai Municipal Science and Technology Major Project （2019SHZDZX01）
InGaAs/InP avalanche photodiodes （InGaAs/InP APDs） are capable of detecting single photons in the near infrared. With advantages of high integration and low-power consumption， they are widely used in quantum information science， laser mapping， deep space communication and other fields. In order to reduce error counts， InGaAs/InP APDs are generally operated in the gated Geiger mode， where the repetition frequency of the gating signal directly determines the detector''s working rate. Thus， we adopt a low-pass filtering scheme to build a high-performance InGaAs/InP single-photon detector with adjustable GHz repeating frequency by integrating the processing circuit with GHz sine gating signal generation， avalanche signal acquisition， temperature control， bias voltage regulation and other functions. When the frequency of GHz gating signal increases to 2 GHz， its phase noise is still better than the -70 dBc/Hz@10 kHz， and the spike noise is suppressed to the level of thermal noise. When the detection efficiency is 10%， the dark count is only 2.4×10-6/ gate. In addition， we also verify the long-term stability of the detector under this scheme， and test the influence of working rate， bias voltage and other factors on the key performance parameters of APD， which lays a foundation for the further integration and promotion of GHz InGaAs/InP APDs.
WANG Tian-Ye, FEI Qi-Lai, XU Bo, LIANG Yan, ZENG He-Ping. GHz InGaAs/InP single-photon detector with tunable repetition frequencies[J]. Journal of Infrared and Millimeter Waves,2021,40(6):840~846Copy