Design of high refractive index contrast subwavelength grating reflector for 940 nmVCSEL

National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

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Supported by National Natural Science Foundation of China (11474038),Jilin Science and Technology Development Plan of China (20200401073GX)

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    A high-refractive-index contrast subwavelength grating (HCG) for 940 nm GaAs-based VCSEL is reported. The reflector is composed of GaAs and AlOx. The effects of the grating parameters of TE-HCG on refractivity are discussed in detail. And the structural characteristics of TE-HCG and TM-HCG are analyzed, especially the influence of their topography errors on the high reflection band. The 940 nm TE-HCG has a large reflection bandwidth of up to 97 nm with its reflectivity for TE incident light more than 99.5%, and the ratio of Ratio of high reflection band to central wavelength is more than 10%. But for TM incident light its reflectivity is less than 90%. It is worth mentioning that the VCSEL with such a TE-HCG can be prepared by one-time epitaxial growth technology, which helps to improve the performance of the device. Furthermore, it greatly reduces the manufacturing difficulty and cost of a VCSEL.

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LUO Yan, HAO Yong-Qin, YAN Chang-Ling. Design of high refractive index contrast subwavelength grating reflector for 940 nmVCSEL[J]. Journal of Infrared and Millimeter Waves,2021,40(6):834~839

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  • Received:November 05,2020
  • Revised:August 05,2021
  • Adopted:December 21,2020
  • Online: July 30,2021
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