Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas

1.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.University of Chinese Academy of Sciences, Beijing 100049, China

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Supported by National Key Research and Development Program of China (2016YFB0402403), National Natural Science Foundation of China (61974152, 61904183, 61534006), the Youth Innovation Promotion Association(2016219), Shanghai Rising-Star Program (20QA141500).

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    The surface leakage current and thermal stability of the infrared detector are highly related to the sidewall surface of the mesa. This work focused on researching the sidewalls'' properties of InAs/GaSb type-II superlattice middle-wavelength infrared detectors by gate-control techniques. It was found the I-V curves for samples with or without annealing showed significant difference at 80 K, and the dark current density of the annealing sample increased from 2.17×10-?7 ?A/cm2 to 6.96×10-5A/cm2 comparing with the sample without annealing at the bias of -?0.05 V. The results of gate-control experiment proved the surface fixed charge was increased by 2.76×1012 cm-?2 after annealing, which caused severe surface tunneling leakage. And the XPS showed the elemental Sb increased after annealing.

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CUI Yu-Rong, XU Zhi-Cheng, HUANG Min, XU Jia-Jia, CHEN Jian-Xin, HE Li. Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas[J]. Journal of Infrared and Millimeter Waves,2021,40(4):427~431

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  • Received:August 04,2020
  • Revised:August 14,2020
  • Adopted:August 25,2020
  • Online: July 28,2021
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