Molecular beam epitaxy growth and characteristics of the high quantum efficiency InAs/GaSb type-II superlattices MWIR detector
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Affiliation:

1.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.University of Chinese Academy of Sciences, Beijing 100049, China

Clc Number:

TN304.2;O484.1

Fund Project:

Supported by the National Natural Science Foundation of China (NSFC) (61904183, 61974152, 61534006, 61505237, 61505235), the National Key Research and Development Program of China (2016YFB0402403), the Youth Innovation Promotion Association, CAS (2016219), and the Fund of Shanghai Science and Technology Foundation (16JC1400403).

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    Abstract:

    A very high quantum efficiency InAs/GaSb T2SL mid-wavelength infrared (MWIR) photodetector has been grown by molecular beam epitaxy (MBE). The T2SL detector structure material exhibited smooth surface with step-flow growth and excellent structural homogeneity. The 50% cut-off wavelength was about 5.5 μm. The peak current responsivity was 2.6 A/W corresponding to a quantum efficiency over 80% at 77 K, which was comparable to that of MCT. At 77 K, the dark current density at -50 mV bias was 1.8×10-6 A/cm2 and the resistance-area product (RA) at maximum (-50 mV bias) was 3.8×105 Ω·cm2. The peak detectivity was calculated to be 6.1 × 1012 cm Hz1/2/W.

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CHEN Kai-Hao, XU Zhi-Cheng, LIANG Zhao-Ming, ZHU Yi-Hong, CHEN Jian-Xin, HE Li. Molecular beam epitaxy growth and characteristics of the high quantum efficiency InAs/GaSb type-II superlattices MWIR detector[J]. Journal of Infrared and Millimeter Waves,2021,40(3):285~289

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History
  • Received:May 29,2020
  • Revised:May 11,2021
  • Adopted:June 17,2020
  • Online: April 27,2021
  • Published: June 25,2021