Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging
Author:
Affiliation:

Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, School of Information and Electrics, Beijing Institute of Technology, Beijing 100081, China

Clc Number:

TN454

Fund Project:

Supported by National Natural Science Foundation of China (61527805)

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    A simple and effective design method for high cut-off frequency Schottky barrier diode is proposed and implemented. The cut-off frequency of the processed Schottky barrier diode is about 800 GHz, which can reach about 1 THz with the optimized parameters through the test results and simulation data in SMIC 180 nm process. The integrated detector including antennas, matching circuit and Schottky barrier diode is completed, whose tested responsivity could achieve 130 V/W and noise equivalent power is estimated to be 400 pW/ at 220 GHz. The imaging experiment of invisible liquid surface in ceramic bottles has been completed and good results have been achieved.

    Reference
    Related
    Cited by
Get Citation

CUI Da-Sheng, YANG Jia-Ming, YAO Hong-Xuan, LYU Xin. Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging[J]. Journal of Infrared and Millimeter Waves,2021,40(2):184~188

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:May 07,2020
  • Revised:April 13,2021
  • Adopted:June 29,2020
  • Online: March 30,2021
  • Published: