Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
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Affiliation:

1.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China;3.Beijing Academy of Quantum Information Sciences, Beijing 100193, China;4.Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China

Clc Number:

O43

Fund Project:

Supported by the National Natural Science Foundation of China (61790580, 61790581, 61790582, 61435012), the National Key Technologies R&D Program of China (2018YFA0306101), the Key R&D Program of Guangdong Province (2018B030329001), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20170032).

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    Abstract:

    GaAs-based 1.3 μm InAs quantum dot laser have been grown by MBE system. Under the optimized InAs quantum dots growth temperature of 520℃, and the methods of Be-doping in the active region are adopted for better device performance. With a ridge width of 100 μm and cavity length of 2 mm, the maximum output power of single facet without coating has reached up to 1008 mW under continuous wave (CW) operation at room temperature, and the threshold current density is 110 A/cm2. The QD lasers can still operate at continuous waves (CW) up to 80℃, and the characteristic temperature below 50℃ is as high as 405 K.

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YUAN Ye, SU Xiang-Bin, YANG Cheng-ao, ZHANG Yi, SHANG Jin-Ming, XIE Sheng-Wen, ZHANG Yu, NI Hai-Qiao, XU Ying-Qiang, NIU Zhi-Chuan. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. Journal of Infrared and Millimeter Waves,2020,39(6):667~670

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History
  • Received:February 15,2020
  • Revised:November 11,2020
  • Adopted:March 31,2020
  • Online: November 10,2020
  • Published: