Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers

doi:10.11972/j.issn.1001-9014.2020.06.001

Home > Archive>Volume 39, Issue 6, 2020 >667-670. DOI:10.11972/j.issn.1001-9014.2020.06.001

Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
DOI:
                        10.11972/j.issn.1001-9014.2020.06.001
                    
CSTR:
                        [cstr]
                    
Author:
                        
                        
                    
Affiliation:1.State Key Laboratory for Superlattices and Microstructures， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;2.Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences， Beijing 100049， China;3.Beijing Academy of Quantum Information Sciences， Beijing 100193， China;4.Laboratory of Solid Quantum Material Center， College of Physics and Electronic Engineering， Shanxi University， Taiyuan 030006， China
Clc Number:O43
Fund Project:Supported by the National Natural Science Foundation of China (61790580, 61790581, 61790582, 61435012), the National Key Technologies R&D Program of China (2018YFA0306101), the Key R&D Program of Guangdong Province (2018B030329001), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20170032).

Article

Figures

Metrics

Reference

Cited by

Materials

Comments

Abstract:

GaAs-based 1.3 μm InAs quantum dot laser have been grown by MBE system. Under the optimized InAs quantum dots growth temperature of 520℃， and the methods of Be-doping in the active region are adopted for better device performance. With a ridge width of 100 μm and cavity length of 2 mm， the maximum output power of single facet without coating has reached up to 1008 mW under continuous wave （CW） operation at room temperature， and the threshold current density is 110 A/cm². The QD lasers can still operate at continuous waves （CW） up to 80℃， and the characteristic temperature below 50℃ is as high as 405 K.

Reference

Cited by

Get Citation

YUAN Ye, SU Xiang-Bin, YANG Cheng-ao, ZHANG Yi, SHANG Jin-Ming, XIE Sheng-Wen, ZHANG Yu, NI Hai-Qiao, XU Ying-Qiang, NIU Zhi-Chuan. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. Journal of Infrared and Millimeter Waves,2020,39(6):667~670

Copy

Article Metrics

Abstract:
PDF:
HTML:
Cited by:

History

Received:February 15,2020
Revised:November 11,2020
Adopted:March 31,2020
Online: November 10,2020
Published:

Home

Introduction

Editorial Board

Authors' Guidelines

Open Access

Publishing Ethics

Downloads

Copyright

Contact Us

中文版

Get Citation

Share

Article Metrics

History

Article QR Code