Research progress of room temperature semiconductor infrared photodetectors

1.School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3.Mathematics and Science College, Shanghai Normal University, Shanghai 200234, China;4.School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China

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Supported by Member of the Youth Promotion Association of the Chinese Academy of Sciences(No. 2018276);Chinese Academy of Sciences Pilot B(XDB43010200, XDB43010400)

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    Room temperature operation of infrared photon detectors will open up a wider range of applications. This article summarizes the room temperature performance and dark current mechanism of semiconductor devices from near infrared to long wavelength infrared. Different methods to suppress dark current including the design of the interband cascade structure of InAs/GaSb type Ⅱ superlattices and the nonequilibrium operation mode of HgCdTe to suppress the Auger process show unique advantages. These electronic structural designs, combined with the latest progress in subwavelength photonic structures to enhance light coupling and reduce dark current, hold the promise to achieve a high performance infrared imaging chip operating in room temperature in the near future.

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XIE Tian, YE Xin-Hui, XIA Hui, LI Ju-Zhu, ZHANG Shuai-Jun, JIANG Xin-Yang, DENG Wei-Jie, WANG Wen-Jing, LI Yu-Ying, LIU Wei-Wei, LI Xiang, LI Tian-Xin. Research progress of room temperature semiconductor infrared photodetectors[J]. Journal of Infrared and Millimeter Waves,2020,39(5):584~595

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  • Received:December 31,2019
  • Revised:August 26,2020
  • Adopted:February 08,2020
  • Online: August 18,2020
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