Diode-end-pumped passively Q-switched Nd:YAP/YVO4 Raman laser at 1.2 μm
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1.College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China;2.College of Mathematics and Physics, Wenzhou University, Wenzhou 325035, China

Clc Number:

TN248.1

Fund Project:

National Natural Science Foundation of China 61505147;Zhejiang Provincial Natural Science Foundation of China LY19F050012;the Public welfare projects of Wenzhou city G20180013Supported by National Natural Science Foundation of China (61505147),Zhejiang Provincial Natural Science Foundation of China (LY19F050012),the Public welfare projects of Wenzhou city (G20180013).

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    Abstract:

    The output characteristics of passively Q-switched YVO4 Raman laser derived by a diode end-pumped Nd:YAP laser at 1080 nm was investigated. A Cr4+:YAG/YAG composite crystal with an initial transmittance of 85% was used as saturable absorber. The first-Stokes wave output power and pulse characteristics based on a-cut YVO4 crystal with the Raman shift of 890 cm-1 were studied. Under an incident pump power of 9.87 W, the average output power of 0.76W and conversion efficiency of 7.7% were obtained for the first-Stokes wave. The pulse repetition frequency rose from 3.7 to 33.5 kHz as the incident pump power increased from threshold to 9.87 W. The pulse width was about 1.5 ns at the maximum incident pump power. Therefore, the corresponding maximum single pulse energy and peak power were 22.8 μJ and 15.2 kW, respectively.

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ZHANG Li, ZHU Hai-Yong, SUN Ying-Lu, DUAN Yan-Min, QI Zi-Qin, RUAN Xiu-Kai, CHENG Meng-Yao. Diode-end-pumped passively Q-switched Nd:YAP/YVO4 Raman laser at 1.2 μm[J]. Journal of Infrared and Millimeter Waves,2020,39(6):786~790

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History
  • Received:December 30,2019
  • Revised:August 02,2020
  • Adopted:February 28,2020
  • Online: July 24,2020
  • Published:
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